Infineon Technologies
MMBTA 56 LT1
Bipolar Transistors - BJT AF GP BJT PNP 80V 0.5A
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- Bipolar Transistors - BJT
- Series
- MMBTA
- Package
- SOT-23-3
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector- Base Voltage VCBO
- 80 V
- Emitter- Base Voltage VEBO
- 4 V
- Maximum DC Collector Current
- 0.5 A
- Gain Bandwidth Product fT
- 100 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Height
- 1(Max) mm
- Length
- 2.9 mm
- Width
- 1.3 mm
Show more parameters (3)
- Pd - Power Dissipation
- 330 mW
- Part # Aliases
- MMBTA56LT1HTSA1 MMBTA56LT1XT SP000011691
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.