Toshiba
2SC2712-Y,LF(B
Bipolar Transistors - BJT
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Mounting Style
- SMD/SMT
Technical Specifications
16 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 150 mA
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 250 mV
- Pd - Power Dissipation
- 150 mW
- Gain Bandwidth Product fT
- 80 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 125 C
Show more parameters (4)
- Continuous Collector Current
- 150 mA
- Country of Origin
- TH
- DC Collector/Base Gain hfe Min
- 70
- DC Current Gain hFE Max
- 700
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.