ON Semiconductor / Fairchild
KSB1017YTU
Bipolar Transistors - BJT PNP Epitaxial Sil
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Brand
- ON Semiconductor / Fairchild
- Product Category
- Bipolar Transistors - BJT
- Series
- KSB1017
- Package
- TO-220F-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- E
Technical Specifications
18 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 80 V
- Collector- Base Voltage VCBO
- - 80 V
- Emitter- Base Voltage VEBO
- - 5 V
- Collector-Emitter Saturation Voltage
- - 1 V
- Maximum DC Collector Current
- 4 A
- Gain Bandwidth Product fT
- 9 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 240
- Height
- 9.19 mm
Show more parameters (6)
- Length
- 10.16 mm
- Width
- 4.7 mm
- Continuous Collector Current
- - 4 A
- DC Collector/Base Gain hfe Min
- 40
- Pd - Power Dissipation
- 25 W
- Unit Weight
- 0.080072 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.