Central Semiconductor
2N5551 TRA TIN/LEAD
Bipolar Transistors - BJT NPN 180Vcbo 160Vceo 6.0Vebo 600mA 625mW
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N5551
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Reel
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 160 V
- Collector- Base Voltage VCBO
- 180 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 200 mV
- Pd - Power Dissipation
- 1 W
- Gain Bandwidth Product fT
- 300 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 600 mA
Show more parameters (2)
- DC Collector/Base Gain hfe Min
- 50 at 10 V, 1 mA
- DC Current Gain hFE Max
- 250 at 5 V, 10 mA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.