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Toshiba

2SK208-R(TE85L,F)

JFET Junction FET N-Ch 0.3 to 6.5mA 10mA

Basic Information

View Datasheet ↗
Manufacturer
Toshiba
Product Category
JFET
Series
2SK208
Package
SC-59-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

10 parameters
Transistor Polarity
N-Channel
Configuration
Single
Vds - Drain-Source Breakdown Voltage
10 V
Vgs - Gate-Source Breakdown Voltage
- 30 V
Drain-Source Current at Vgs=0
0.3 mA
Id - Continuous Drain Current
6.5 mA
Pd - Power Dissipation
100 mW
Type
JFET
Gate-Source Cutoff Voltage
- 5 V
Unit Weight
0.000282 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

2SK208-R(TE85L,F) Specifications and Datasheet | ChipSourceHub