onsemi
2N3055G
Bipolar Transistors - BJT NPN 15A 60V
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N3055
- Package
- TO-204-2
- Mounting Style
- Through Hole
- Packaging
- Tray
Technical Specifications
17 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 15 A
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 3 V
- Pd - Power Dissipation
- 115 W
- Gain Bandwidth Product fT
- 2.5 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
Show more parameters (5)
- Country of Assembly
- MX
- Country of Diffusion
- MY
- Country of Origin
- MX
- DC Collector/Base Gain hfe Min
- 20
- Unit Weight
- 0.423288 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.