Advanced Semiconductor, Inc.
BLV34
RF Bipolar Transistors RF Transistor
Basic Information
- Manufacturer
- Advanced Semiconductor, Inc.
- Product Category
- RF Bipolar Transistors
- Mounting Style
- Through Hole
- Packaging
- Tray
- RoHS
- Compliant (source record)
Technical Specifications
11 parameters- Transistor Type
- Bipolar Power
- Technology
- Si
- DC Collector/Base Gain hfe Min
- 25
- Collector- Emitter Voltage VCEO Max
- 75 V
- Emitter- Base Voltage VEBO
- 4 V
- Continuous Collector Current
- 15 A
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- Operating Frequency
- 225 MHz
- Type
- RF Bipolar Power
- Pd - Power Dissipation
- 150 W
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.