Diodes Incorporated
MMSTA56Q-7
Bipolar Transistors - BJT GenPurpTranstr
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- MMSTA56Q
- Package
- SOT-323-3
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 80 V
- Collector- Base Voltage VCBO
- - 80 V
- Emitter- Base Voltage VEBO
- - 4 V
- Collector-Emitter Saturation Voltage
- - 0.25 V
- Maximum DC Collector Current
- - 500 mA
- Gain Bandwidth Product fT
- 50 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- - 500 mA
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 100
- Pd - Power Dissipation
- 200 mW
- Qualification
- AEC-Q101
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.