Central Semiconductor
MPSA45 PBFREE
Bipolar Transistors - BJT NPN 400Vcbo 350Vceo 6.0Vebo 50mA 6.0pF
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- MPSA45
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 350 V
- Collector- Base Voltage VCBO
- 400 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 750 mV
- Pd - Power Dissipation
- 625 mW
- Gain Bandwidth Product fT
- 20 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 300 mA
Show more parameters (2)
- DC Collector/Base Gain hfe Min
- 40 at 10 V, 100 mA
- DC Current Gain hFE Max
- 200 at 10 V, 10 mA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.