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Taiwan Semiconductor

TSM8568CS (P) RLG

MOSFET -30V, 13A, Comp. P- Channel Power MOSFET

Basic Information

View Datasheet ↗
Manufacturer
Taiwan Semiconductor
Product Category
MOSFET
Package
SOP-8
Mounting Style
SMD/SMT
Packaging
Reel
RoHS
Compliant (source record)

Technical Specifications

20 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - Continuous Drain Current
13 A
Rds On - Drain-Source Resistance
18 mOhms
Vgs th - Gate-Source Threshold Voltage
1 V
Vgs - Gate-Source Voltage
10 V
Qg - Gate Charge
21.5 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
6 W
Show more parameters (8)
Configuration
Single
Channel Mode
Enhancement
Transistor Type
1 P-Channel
Forward Transconductance - Min
16 S
Fall Time
45.4 ns
Rise Time
40.4 ns
Typical Turn-Off Delay Time
45.4 ns
Typical Turn-On Delay Time
6.2 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

TSM8568CS (P) RLG Specifications and Datasheet | ChipSourceHub