ROHM Semiconductor
2SAR586D3FRATL
Bipolar Transistors - BJT BIPOLAR TRANS BJT PNP TO-252
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-252-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
16 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector- Base Voltage VCBO
- 80 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 320 mV
- Pd - Power Dissipation
- 10 W
- Gain Bandwidth Product fT
- 200 MHz
- Maximum Operating Temperature
- + 150 C
- Qualification
- AEC-Q101
- Continuous Collector Current
- - 5 A
Show more parameters (4)
- Country of Origin
- TH
- DC Collector/Base Gain hfe Min
- 120 at - 500 mA, - 3 V
- DC Current Gain hFE Max
- 390 at - 500 mA, - 3 V
- Part # Aliases
- 2SAR586D3FRA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.