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Nexperia

PHPT61010NYX

Bipolar Transistors - BJT 100V 10A NPN high power bipolar

Basic Information

View Datasheet ↗
Manufacturer
Nexperia
Product Category
Bipolar Transistors - BJT
Package
LFPAK56-5
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

18 parameters
Technology
Si
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage VCEO Max
100 V
Collector- Base Voltage VCBO
100 V
Emitter- Base Voltage VEBO
7 V
Collector-Emitter Saturation Voltage
250 mV
Maximum DC Collector Current
20 A
Gain Bandwidth Product fT
145 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
DC Current Gain hFE Max
275
Show more parameters (6)
Continuous Collector Current
10 A
DC Collector/Base Gain hfe Min
25
Pd - Power Dissipation
25 W
Qualification
AEC-Q101
Part # Aliases
PHPT61010NYX
Unit Weight
0.002847 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

PHPT61010NYX Specifications and Datasheet | ChipSourceHub