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Toshiba

RN2971(TE85L,F)

Bipolar Transistors - Pre-Biased US6 PLN (LF) TRANSISTOR Pd 200mW F 1MHz

Basic Information

View Datasheet ↗
Manufacturer
Toshiba
Product Category
Bipolar Transistors - Pre-Biased
Package
SM-6
Mounting Style
SMD/SMT
Packaging
Cut Tape

Technical Specifications

14 parameters
Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
10 kOhms
DC Collector/Base Gain hfe Min
120
Maximum Operating Frequency
200 MHz
Collector- Emitter Voltage VCEO Max
- 50 V
Continuous Collector Current
- 100 mA
Peak DC Collector Current
- 100 mA
Pd - Power Dissipation
200 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Emitter- Base Voltage VEBO
- 5 V
Show more parameters (2)
Channel Mode
Enhancement
Maximum DC Collector Current
- 100 mA

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

RN2971(TE85L,F) Specifications and Datasheet | ChipSourceHub