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onsemi

2SA1417S-TD-E

Bipolar Transistors - BJT BIP PNP 2A 100V

Basic Information

View Datasheet ↗
Manufacturer
onsemi
Product Category
Bipolar Transistors - BJT
Series
2SA1417
Package
SC-62-3
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

14 parameters
Technology
Si
Transistor Polarity
PNP
Configuration
Single
Maximum DC Collector Current
3 A
Collector- Emitter Voltage VCEO Max
100 V
Collector- Base Voltage VCBO
120 V
Emitter- Base Voltage VEBO
6 V
Collector-Emitter Saturation Voltage
220 mV
Pd - Power Dissipation
500 mW
Gain Bandwidth Product fT
120 MHz
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
- 2 A
Show more parameters (2)
Country of Origin
CN
DC Current Gain hFE Max
400

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

2SA1417S-TD-E Specifications and Datasheet | ChipSourceHub