Central Semiconductor
MPS650
Bipolar Transistors - BJT NPN Hi-Cur
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- MPS65
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Polarity
- NPN
- Collector- Emitter Voltage VCEO Max
- 40 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 0.5 V
- Maximum DC Collector Current
- 2 A
- Gain Bandwidth Product fT
- 75 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Height
- 5.33 mm
- Length
- 5.21 mm
- Width
- 4.19 mm
Show more parameters (5)
- Continuous Collector Current
- 2 A
- DC Collector/Base Gain hfe Min
- 40
- Pd - Power Dissipation
- 625 mW
- Part # Aliases
- MPS650 PBFREE
- Unit Weight
- 0.016000 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.