Diodes Incorporated
HBDM60V600X-7
Bipolar Transistors - BJT Functional Array SOT363 T&R 3K
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT363-6
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
14 parameters- Transistor Polarity
- NPN, PNP
- Configuration
- Dual
- Maximum DC Collector Current
- 500 mA, 600 mA
- Collector- Emitter Voltage VCEO Max
- 60 V, 65 V
- Collector- Base Voltage VCBO
- 60 V, 80 V
- Emitter- Base Voltage VEBO
- 5.5 V, 6 V
- Collector-Emitter Saturation Voltage
- 300 mV, 200 mV
- Pd - Power Dissipation
- 200 mW
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 500 mA, 600 mA
- Country of Origin
- CN
Show more parameters (2)
- DC Collector/Base Gain hfe Min
- 100
- DC Current Gain hFE Max
- 300
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.