MACOM
CGHV96050F1
GaN FETs GaN HEMT 7.9-9.6GHz, 50 Watt
Basic Information
View Datasheet ↗- Manufacturer
- MACOM
- Product Category
- GaN FETs
- Package
- 440210
- Mounting Style
- Screw Mount
- Packaging
- Tray
Technical Specifications
17 parameters- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 6 A
- Vgs th - Gate-Source Threshold Voltage
- - 3 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Country of Origin
- CN
- Development Kit
- CGHV96050F1-TB
- Gain
- 16 dB
- Maximum Operating Frequency
- 9.6 GHz
- Minimum Operating Frequency
- 7.9 GHz
Show more parameters (5)
- Output Power
- 80 W
- Product
- GaN HEMTs
- Technology
- GaN
- Transistor Type
- GaN HEMT
- Vgs - Gate-Source Breakdown Voltage
- - 10 V to 2 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.