Central Semiconductor
CMPT5551 TR
Bipolar Transistors - BJT NPN GP
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- CMPT5551
- Package
- SOT-23
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 160 V
- Collector- Base Voltage VCBO
- 180 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 0.2 V
- Maximum DC Collector Current
- 600 mA
- Gain Bandwidth Product fT
- 300 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Collector/Base Gain hfe Min
- 80
Show more parameters (3)
- Pd - Power Dissipation
- 350 mW
- Part # Aliases
- CMPT5551 PBFREE TR
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.