Toshiba
TTC014,L1NV
Bipolar Transistors - BJT PWR TRANS NEW PW-MOLD PC=40W
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- TTC014
- Package
- SiC
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 800 V
- Collector- Base Voltage VCBO
- 900 V
- Emitter- Base Voltage VEBO
- 8 V
- Collector-Emitter Saturation Voltage
- 1 V
- Maximum DC Collector Current
- 2 A
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 200
- Continuous Collector Current
- 1 A
- DC Collector/Base Gain hfe Min
- 100
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.