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Central Semiconductor

MJE520

Bipolar Transistors - BJT 30Vcbo 30Vceo 4.0Vebo 3.0A 25W

Basic Information

View Datasheet ↗
Manufacturer
Central Semiconductor
Product Category
Bipolar Transistors - BJT
Series
MJE520
Package
TO-126-3
Mounting Style
Through Hole
Packaging
Bulk
RoHS
Compliant (source record)

Technical Specifications

13 parameters
Technology
Si
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage VCEO Max
30 V
Collector- Base Voltage VCBO
30 V
Emitter- Base Voltage VEBO
4 V
Maximum DC Collector Current
7 A
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
3 A
DC Collector/Base Gain hfe Min
25 at 1 A, 1 V
Pd - Power Dissipation
25 W
Show more parameters (1)
Part # Aliases
MJE520 PBFREE

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

MJE520 Specifications and Datasheet | ChipSourceHub