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onsemi

NVMFS6H801NT1G

MOSFETs TRENCH 8 80V NFET

Basic Information

View Datasheet ↗
Manufacturer
onsemi
Product Category
MOSFETs
Series
NVMFS6H801N
Package
SO-8FL-4
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

24 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
80 V
Id - Continuous Drain Current
157 A
Rds On - Drain-Source Resistance
2.8 mOhms
Vgs - Gate-Source Voltage
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage
2 V
Qg - Gate Charge
64 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
166 W
Show more parameters (12)
Channel Mode
Enhancement
Qualification
AEC-Q101
Configuration
Single
Country of Assembly
MY
Country of Diffusion
JP
Country of Origin
MY
Fall Time
19 ns
Forward Transconductance - Min
128 S
Rise Time
74 ns
Typical Turn-Off Delay Time
70 ns
Typical Turn-On Delay Time
25 ns
Unit Weight
0.026455 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NVMFS6H801NT1G Specifications and Datasheet | ChipSourceHub