Vishay Semiconductors
SIHA120N60E-GE3
MOSFETs 650V Vds; 30V Vgs TO-220
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay Semiconductors
- Product Category
- MOSFETs
- Series
- SIHA E
- Package
- TO-220-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
22 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 600 V
- Id - Continuous Drain Current
- 25 A
- Rds On - Drain-Source Resistance
- 120 mOhms
- Vgs - Gate-Source Voltage
- - 30 V, 30 V
- Vgs th - Gate-Source Threshold Voltage
- 3 V
- Qg - Gate Charge
- 45 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 34 W
Show more parameters (10)
- Channel Mode
- Enhancement
- Configuration
- Single
- Country of Origin
- CN
- Fall Time
- 33 ns
- Forward Transconductance - Min
- 6 S
- Rise Time
- 65 ns
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 31 ns
- Typical Turn-On Delay Time
- 19 ns
- Unit Weight
- 0.068784 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.