STMicroelectronics
ST9060C
RF MOSFET Transistors RF Power LDMOS transistor HF up to 1.5 GHz
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- RF MOSFET Transistors
- Series
- ST9060C
- Package
- M243-3
- Mounting Style
- SMD/SMT
Technical Specifications
12 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 12 A
- Vds - Drain-Source Breakdown Voltage
- 90 V
- Gain
- 17.3 dB
- Output Power
- 80 W
- Maximum Operating Temperature
- + 200 C
- Operating Frequency
- 1.5 GHz
- Type
- RF Power MOSFET
- Number of Channels
- 1 Channel
- Pd - Power Dissipation
- 170 W
- Vgs - Gate-Source Voltage
- 2.9 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.