ON Semiconductor
2SB1202S-TL-E
Bipolar Transistors - BJT HIGH-CURRENT SWITCHING
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SB1202
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 50 V
- Emitter- Base Voltage VEBO
- 6 V
- Maximum DC Collector Current
- 3 A
- Gain Bandwidth Product fT
- 150 MHz
- Maximum Operating Temperature
- + 150 C
- Height
- 2.3 mm
- Length
- 14.5 mm
- Width
- 6.5 mm
- Continuous Collector Current
- 0.1 A
- Pd - Power Dissipation
- 15 W
Show more parameters (1)
- Unit Weight
- 0.009920 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.