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ON Semiconductor

NTR4171PT1G

MOSFET PFET SOT23 30V TR 0.075R

Basic Information

View Datasheet ↗
Manufacturer
ON Semiconductor
Product Category
MOSFET
Series
NTR4171P
Package
SOT-23-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

26 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - Continuous Drain Current
3.5 A
Rds On - Drain-Source Resistance
75 mOhms
Vgs th - Gate-Source Threshold Voltage
700 mV
Vgs - Gate-Source Voltage
10 V
Qg - Gate Charge
15.6 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
1.25 W
Show more parameters (14)
Configuration
Single
Channel Mode
Enhancement
Height
0.94 mm
Length
2.9 mm
Product
MOSFET Small Signal
Transistor Type
1 P-Channel
Type
Power MOSFET
Width
1.3 mm
Forward Transconductance - Min
7 S
Fall Time
14 ns
Rise Time
16 ns
Typical Turn-Off Delay Time
32 ns
Typical Turn-On Delay Time
8 ns
Unit Weight
0.050717 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NTR4171PT1G Specifications and Datasheet | ChipSourceHub