ROHM Semiconductor
2SB1188T100P
Bipolar Transistors - BJT DVR PNP 32V 2A
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 32 V
- Collector- Base Voltage VCBO
- - 32 V
- Emitter- Base Voltage VEBO
- 5 V
- Maximum DC Collector Current
- 2 A
- Gain Bandwidth Product fT
- 100 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 82 at 500 mA, 3 V
- Height
- 1.5 mm
- Length
- 4.5 mm
Show more parameters (5)
- Width
- 2.5 mm
- Continuous Collector Current
- - 2 A
- DC Collector/Base Gain hfe Min
- 82
- Pd - Power Dissipation
- 2000 mW
- Unit Weight
- 0.004603 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.