Qorvo
TGF2060
RF JFET Transistors DC-20GHz NF 1.4dB Gain 12dB P1dB 28dBm
Basic Information
View Datasheet ↗- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Series
- TGF
- Mounting Style
- SMD/SMT
- Packaging
- Gel Pack
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Transistor Type
- pHEMT
- Technology
- GaAs
- Gain
- 12 dB
- Vds - Drain-Source Breakdown Voltage
- 8 V
- Vgs - Gate-Source Breakdown Voltage
- - 3 V
- Id - Continuous Drain Current
- 194 mA
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 2.1 W
- Configuration
- Single
- Operating Frequency
- 20 GHz
- Operating Temperature Range
- - 65 C to + 150 C
Show more parameters (6)
- Product
- RF JFET
- Type
- GaAs pHEMT
- Forward Transconductance - Min
- 232 mS
- NF - Noise Figure
- 1.4 dB
- P1dB - Compression Point
- 28 dBm
- Part # Aliases
- 1098619
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.