ON Semiconductor
NSS1C301ET4G
Bipolar Transistors - BJT BIPOLAR XTSR 3A/100V
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- NSS1C301E
- Package
- DPAK-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 100 V
- Collector- Base Voltage VCBO
- 140 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 0.115 V
- Maximum DC Collector Current
- 6 A
- Gain Bandwidth Product fT
- 120 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 360
- Continuous Collector Current
- 3 A
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 120
- Pd - Power Dissipation
- 33 W
- Unit Weight
- 0.009185 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.