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onsemi

NTMYS3D5N04CTWG

MOSFETs TRENCH 6 40V SL NFET

Basic Information

View Datasheet ↗
Manufacturer
onsemi
Product Category
MOSFETs
Series
NTMYS3D5N04C
Package
LFPAK-4
Mounting Style
SMD/SMT
Packaging
Reel

Technical Specifications

22 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
40 V
Id - Continuous Drain Current
102 A
Rds On - Drain-Source Resistance
3.3 mOhms
Vgs - Gate-Source Voltage
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Qg - Gate Charge
23 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
68 W
Show more parameters (10)
Channel Mode
Enhancement
Configuration
Single
Country of Origin
PH
Fall Time
3 ns
Forward Transconductance - Min
93 S
Rise Time
47 ns
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
19 ns
Typical Turn-On Delay Time
10 ns
Unit Weight
0.002642 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NTMYS3D5N04CTWG Specifications and Datasheet | ChipSourceHub