ON Semiconductor
NSVBCP56-10T3G
Bipolar Transistors - BJT SS SOT223 GP XSTR NPN 80V
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-223-4
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 500 mV
- Maximum DC Collector Current
- 1 A
- Gain Bandwidth Product fT
- 130 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 160 at 150 mA, 2 V
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 63 at 150 mA, 2 V
- Pd - Power Dissipation
- 1.5 W
- Qualification
- AEC-Q101
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.