STMicroelectronics
LET9120
RF MOSFET Transistors RF Power LdmoST 120W 18 dB 860MHz
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- RF MOSFET Transistors
- Series
- LET9120
- Package
- M246
- Mounting Style
- SMD/SMT
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 18 A
- Vds - Drain-Source Breakdown Voltage
- 80 V
- Gain
- 18 dB
- Output Power
- 120 W
- Maximum Operating Temperature
- + 150 C
- Configuration
- Dual
- Operating Frequency
- 1.6 GHz
- Type
- RF Power MOSFET
- Pd - Power Dissipation
- 200 W
- Vgs - Gate-Source Voltage
- 15 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.