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Taiwan Semiconductor

BC549C B1G

Bipolar Transistors - BJT TO-92, 30V 0.1A NPN Bplr Trans

Basic Information

View Datasheet ↗
Manufacturer
Taiwan Semiconductor
Product Category
Bipolar Transistors - BJT
Series
BC549C
Package
TO-92-3
Mounting Style
Through Hole
RoHS
Compliant (source record)

Technical Specifications

13 parameters
Technology
Si
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage VCEO Max
30 V
Collector- Base Voltage VCBO
30 V
Emitter- Base Voltage VEBO
6 V
Maximum DC Collector Current
200 mA
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
800
Continuous Collector Current
100 mA
DC Collector/Base Gain hfe Min
420
Show more parameters (1)
Pd - Power Dissipation
500 mW

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

BC549C B1G Specifications and Datasheet | ChipSourceHub