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Vishay / Siliconix

SQJA36EP-T2_GE3

MOSFET 40-V(D-S)175C MOSFET N-CHANNEL PowerPAK

Basic Information

View Datasheet ↗
Manufacturer
Vishay
Brand
Vishay / Siliconix
Product Category
MOSFET
Package
PowerPAK SO-8L
Mounting Style
SMD/SMT
Packaging
2.5 V
RoHS
Compliant (source record)

Technical Specifications

20 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
40 V
Id - Continuous Drain Current
350 A
Rds On - Drain-Source Resistance
1.24 mOhms
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
3.5 mm
Qg - Gate Charge
86 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
500 W
Show more parameters (8)
Configuration
Single
Channel Mode
Enhancement
Tradename
TrenchFET
Transistor Type
1 N-Channel
Fall Time
13 ns
Rise Time
17 ns
Typical Turn-Off Delay Time
35 ns
Typical Turn-On Delay Time
18 ns

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SQJA36EP-T2_GE3 Specifications and Datasheet | ChipSourceHub