Toshiba
2SC6026CT-GR
Bipolar Transistors - BJT 100mA 50V
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SC6026CT
- Package
- FSM-3
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Not compliant (source record)
Technical Specifications
13 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 5 V
- Gain Bandwidth Product fT
- 60 MHz
- DC Current Gain hFE Max
- 400
- Height
- 0.48 mm
- Length
- 0.6 mm
- Width
- 0.8 mm
- Continuous Collector Current
- 100 mA
- DC Collector/Base Gain hfe Min
- 120
Show more parameters (1)
- Pd - Power Dissipation
- 50 mW
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.