ON Semiconductor / Fairchild
KSC5502TU
Bipolar Transistors - BJT NPN Planar Silicon
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Brand
- ON Semiconductor / Fairchild
- Product Category
- Bipolar Transistors - BJT
- Series
- KSC5502
- Package
- TO-220-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector- Base Voltage VCBO
- 1.2 kV
- Emitter- Base Voltage VEBO
- 12 V
- Collector-Emitter Saturation Voltage
- 190 mV
- Maximum DC Collector Current
- 2 A
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 15
- Height
- 9.4 mm
- Length
- 10.67 mm
- Width
- 4.83 mm
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 15
- Pd - Power Dissipation
- 50000 mW
- Unit Weight
- 0.063493 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.