ON Semiconductor
NJVMJD350T4G
Bipolar Transistors - BJT BIP PNP 0.5A 300V TR
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- MJD350
- Package
- DPAK-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 300 V
- Collector- Base Voltage VCBO
- 300 V
- Emitter- Base Voltage VEBO
- 3 V
- Collector-Emitter Saturation Voltage
- 1 V
- Maximum DC Collector Current
- 750 mA
- Gain Bandwidth Product fT
- 10 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 240
- Continuous Collector Current
- 0.5 A
Show more parameters (4)
- DC Collector/Base Gain hfe Min
- 30
- Pd - Power Dissipation
- 15 W
- Qualification
- AEC-Q101
- Unit Weight
- 0.009185 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.