Nexperia
PEMX1,315
Bipolar Transistors - BJT 40V 200mW 2xPNP gen purpose transist
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-666-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 40 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 0.2 V
- Gain Bandwidth Product fT
- 100 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 275
- Continuous Collector Current
- 100 mA
- DC Collector/Base Gain hfe Min
- 120
Show more parameters (3)
- Pd - Power Dissipation
- 300 mW
- Qualification
- AEC-Q101
- Unit Weight
- 0.000095 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.