SemiQ
GCMX010A120B3H1P
MOSFET Modules 1200V, 10mohm SiC MOSFET Full Bridge Module
Basic Information
View Datasheet ↗- Manufacturer
- SemiQ
- Product Category
- MOSFET Modules
- Series
- GCMX
- Package
- B3
- Mounting Style
- Press Fit
- Packaging
- Bulk
Technical Specifications
22 parameters- Technology
- SiC
- Transistor Polarity
- N-Channel
- Number of Channels
- 4 Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 201 A
- Rds On - Drain-Source Resistance
- 8.9 mOhms
- Vgs - Gate-Source Voltage
- - 5 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 600 W
- Country of Origin
- CN
Show more parameters (10)
- Fall Time
- 15 ns
- Height
- 15.2 mm
- Length
- 62.8 mm
- Product
- Modules
- Rise Time
- 9 ns
- Type
- Full Bridge Module
- Typical Turn-Off Delay Time
- 50 ns
- Typical Turn-On Delay Time
- 32 ns
- Vf - Forward Voltage
- 3.9 V
- Width
- 56.7 mm
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.