Qorvo
QPD2195SR
RF JFET Transistors 400 W, 48 V, 1.8-2.2 GHz GaN RF Power Transistor
Basic Information
View Datasheet ↗- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Package
- NI780-2
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
11 parameters- Transistor Type
- HEMT
- Technology
- GaN SiC
- Gain
- 20.4 dB
- Transistor Polarity
- N-Channel
- Output Power
- 400 W
- Maximum Drain Gate Voltage
- 55 V
- Minimum Operating Temperature
- - 40 C
- Configuration
- Single
- Operating Frequency
- 1.8 GHz to 2.2 GHz
- Development Kit
- QPD2195PCB4B01
- Moisture Sensitive
- Yes
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.