Central Semiconductor
2N929A
Bipolar Transistors - BJT 60Vcbo 60Vceo 30mA 500mW 1.8W
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N929A
- Package
- TO-18-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 0.5 V
- Gain Bandwidth Product fT
- 45 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 175 C
- DC Current Gain hFE Max
- 350 at 10 mA, 5 V
- Continuous Collector Current
- 30 mA
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 25 at 1 uA, 5 V
- Pd - Power Dissipation
- 1.8 W
- Part # Aliases
- 2N929A PBFREE
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.