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Toshiba

2SA2154CT-Y(TPL3)

Bipolar Transistors - BJT 100mA -50V

Basic Information

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Manufacturer
Toshiba
Product Category
Bipolar Transistors - BJT
Series
2SA2154
Package
FSM-3
Mounting Style
SMD/SMT
Packaging
Reel
RoHS
Not compliant (source record)

Technical Specifications

13 parameters
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 50 V
Collector- Base Voltage VCBO
- 50 V
Emitter- Base Voltage VEBO
- 5 V
Gain Bandwidth Product fT
80 MHz
DC Current Gain hFE Max
400
Height
0.48 mm
Length
0.6 mm
Width
0.8 mm
Continuous Collector Current
- 100 mA
DC Collector/Base Gain hfe Min
120
Show more parameters (1)
Pd - Power Dissipation
50 mW

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

2SA2154CT-Y(TPL3) Specifications and Datasheet | ChipSourceHub