ROHM Semiconductor
BC846BHZGT116
Bipolar Transistors - BJT SOT-23 BJT NPN 65V 120MA
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
16 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 65 V
- Collector- Base Voltage VCBO
- 80 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 400 mV
- Pd - Power Dissipation
- 350 mW
- Gain Bandwidth Product fT
- 300 MHz
- Maximum Operating Temperature
- + 150 C
- Qualification
- AEC-Q101
- Continuous Collector Current
- 120 mA
Show more parameters (4)
- Country of Origin
- JP
- DC Collector/Base Gain hfe Min
- 200 at 2 mA, 5 V
- DC Current Gain hFE Max
- 450 at 2 mA, 5 V
- Part # Aliases
- BC846BHZG
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.