IXYS
IXSA80N120L2-7TR
SiC MOSFETs 1200V 30mohm (80A a. 25C) SiC MOSFET in TO267-7L
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- SiC MOSFETs
- Series
- IXSA80N120L2-7
- Package
- TO-263-7L
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
22 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 79 A
- Rds On - Drain-Source Resistance
- 39 mOhms
- Vgs - Gate-Source Voltage
- - 5 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 4.5 V
- Qg - Gate Charge
- 135 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 395 W
- Channel Mode
- Enhancement
Show more parameters (10)
- Configuration
- Single
- Country of Origin
- CN
- Fall Time
- 13.6 ns
- Product
- MOSFETs
- Rise Time
- 24.6 ns
- Technology
- SiC
- Transistor Type
- 1 N-Channel
- Type
- SiC MOSFET
- Typical Turn-Off Delay Time
- 28.6 ns
- Typical Turn-On Delay Time
- 15.4 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.