onsemi
SS8550DBU
Bipolar Transistors - BJT TO92 PNP 2W BULK
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- SS8550
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
19 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Maximum DC Collector Current
- 1.5 A
- Collector- Emitter Voltage VCEO Max
- 25 V
- Collector- Base Voltage VCBO
- 40 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 280 mV
- Pd - Power Dissipation
- 1 W
- Gain Bandwidth Product fT
- 200 MHz
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- - 1.5 A
Show more parameters (7)
- Country of Assembly
- CN
- Country of Diffusion
- JP
- Country of Origin
- CN
- DC Collector/Base Gain hfe Min
- 85
- DC Current Gain hFE Max
- 300
- Part # Aliases
- SS8550DBU_NL
- Unit Weight
- 0.006314 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.