Toshiba
MT3S16U(TE85L,F)
RF Bipolar Transistors RF 50mW 5.5dB 10V USM 60mA 2GHz
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- RF Bipolar Transistors
- Series
- MT3S16
- Package
- SC-70-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Type
- Bipolar
- Technology
- Si
- Transistor Polarity
- NPN
- DC Collector/Base Gain hfe Min
- 80
- Collector- Emitter Voltage VCEO Max
- 5 V
- Emitter- Base Voltage VEBO
- 2 V
- Continuous Collector Current
- 60 mA
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 125 C
- Configuration
- Single
- Collector- Base Voltage VCBO
- 10 V
- DC Current Gain hFE Max
- 140
Show more parameters (5)
- Operating Frequency
- 4 GHz (Typ)
- Operating Temperature Range
- - 55 C to + 125 C
- Type
- UHF Band Oscillator and Amplifier
- Pd - Power Dissipation
- 100 mW
- Unit Weight
- 0.000219 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.