Central Semiconductor
2N697A
Bipolar Transistors - BJT NPN Med Pwr
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N697
- Package
- TO-39-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
11 parameters- Transistor Polarity
- NPN
- Collector- Emitter Voltage VCEO Max
- 35 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 1.5 V
- Maximum DC Collector Current
- 150 mA
- Gain Bandwidth Product fT
- 50 MHz
- DC Collector/Base Gain hfe Min
- 40 at 150 mA, 10 V
- Pd - Power Dissipation
- 5 W
- Part # Aliases
- 2N697A PBFREE
- Unit Weight
- 0.035486 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.