Infineon Technologies
FF3MR12KM1HPHPSA1
MOSFET Modules CoolSiC MOSFET half bridge module 1200 V
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET Modules
- Series
- CoolSiC
- Mounting Style
- Screw Mount
- Packaging
- Tray
Technical Specifications
13 parameters- Technology
- SiC
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 220 A
- Rds On - Drain-Source Resistance
- 4.44 mOhms
- Vgs - Gate-Source Voltage
- - 7 V, + 20 V, - 10 V, + 23 V
- Vgs th - Gate-Source Threshold Voltage
- 5.1 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 175 C
- Configuration
- Half-Bridge
- Country of Origin
- AT
- Tradename
- 62 mm C-Series
- Type
- Half Bridge
Show more parameters (1)
- Vf - Forward Voltage
- 4.22 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.