Rectron
MMBT5551
Bipolar Transistors - BJT SOT23,NPN,0.6A,160V,HighVolt
Basic Information
View Datasheet ↗- Manufacturer
- Rectron
- Product Category
- Bipolar Transistors - BJT
- Series
- CMBT
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- Reel
Technical Specifications
16 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 600 mA
- Collector- Emitter Voltage VCEO Max
- 160 V
- Collector- Base Voltage VCBO
- 180 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 200 mV
- Pd - Power Dissipation
- 325 mW
- Gain Bandwidth Product fT
- 300 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
Show more parameters (4)
- Country of Origin
- CN
- DC Collector/Base Gain hfe Min
- 80 at 10 mA, 5 V
- DC Current Gain hFE Max
- 250 at 10 mA, 5 V
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.