Toshiba
HN4B102J(TE85L,F)
Bipolar Transistors - BJT PWR TRANS SMV V=30V F=1MHZ
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- HN4B102
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
11 parameters- Transistor Polarity
- NPN, PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- - 30 V, 30 V
- Collector- Base Voltage VCBO
- - 30 V, 60 V
- Emitter- Base Voltage VEBO
- - 7 V, 7 V
- Maximum DC Collector Current
- - 8 A, 8 A
- Minimum Operating Temperature
- - 55
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 500
- Continuous Collector Current
- - 1.8 A, 2 A
- DC Collector/Base Gain hfe Min
- 200
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.