Microchip Technology
APTGX900A170TDP3EG
IGBT Modules PM-IGBT-TFS-DP3
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip Technology
- Product Category
- IGBT Modules
- Mounting Style
- Press Fit
Technical Specifications
11 parameters- Product
- IGBT Modules
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 1.7 kV
- Collector-Emitter Saturation Voltage
- 1.7 V
- Continuous Collector Current at 25 C
- 900 A
- Gate-Emitter Leakage Current
- 300 nA
- Pd - Power Dissipation
- 3.26 kW
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 175 C
- Maximum Gate Emitter Voltage
- 20 V
- Technology
- Si
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.